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Transistor Mosfet Nanométrique

Transistor Mosfet Nanométrique

          
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About the Book

La diminution soutenue des dimensions du transistor accélère la rencontre de la microélectronique avec la mécanique quantique et d'autres lois régissent désormais le transport des électrons. La simulation des composants microélectroniques a donc besoin de nouvelles théories et techniques de modélisation améliorant la compréhension physique des dispositifs de taille nanométrique. Ce livre présente le principe des techniques évolutionnaires (GA, PSO, ...) et leurs applications dans le domaine de la modélisation des composants nanoélectroniques. Le manuscrit donne les bases nécessaires à la compréhension des GAs et l'optimisation par PSO. Il présente l'état de l'art des travaux récemment publiés et les plus significatifs dans le domaine de la modélisation compacte du transistor à double-grilles et leurs limites de validité, et expose ensuite l'approche de la modélisation numérique du DG MOSFET aux dimensions ultimes basée sur le formalisme des fonctions de Green hors-équilibre (NEGF). Finalement, des nouveaux modèles analytiques optimisés qui permettent d'étudier le comportement du transistor DG MOSFET nanométrique sont développés en utilisant les techniques évolutionnaires.


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Product Details
  • ISBN-13: 9786131552021
  • Publisher: Omniscriptum
  • Publisher Imprint: Omniscriptum
  • Height: 229 mm
  • No of Pages: 100
  • Series Title: Omn.Univ.Europ.
  • Weight: 159 gr
  • ISBN-10: 6131552029
  • Publisher Date: 28 Feb 2018
  • Binding: Paperback
  • Language: French
  • Returnable: N
  • Spine Width: 6 mm
  • Width: 152 mm


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