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Semiconductor memory devices: United States Patent 9997462

Semiconductor memory devices: United States Patent 9997462

          
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About the Book

A memory device includes a vertical string of nonvolatile memory cells on a substrate, along with a ground selection transistor extending between the vertical string of nonvolatile memory cells and the substrate. The ground selection transistor can have a current carrying terminal electrically coupled to a channel region of a nonvolatile memory cell in the vertical string of nonvolatile memory cells. The ground selection transistor includes a gate electrode associated with a ground selection line of the memory device. This gate electrode includes: (i) a mask pattern, (ii) a barrier metal layer of a first material extending opposite a sidewall of the mask pattern and (iii) a metal pattern of a second material different from the first material extending between at least a portion of the barrier metal layer and the mask pattern.


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Product Details
  • ISBN-13: 9798573920061
  • Publisher: Independently Published
  • Publisher Imprint: Independently Published
  • Height: 280 mm
  • No of Pages: 26
  • Spine Width: 1 mm
  • Width: 216 mm
  • ISBN-10: 8573920068
  • Publisher Date: 03 Dec 2020
  • Binding: Paperback
  • Language: English
  • Returnable: N
  • Weight: 86 gr


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Semiconductor memory devices: United States Patent 9997462
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