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La Mram, Nouvelle Mémoire Non Volatile

La Mram, Nouvelle Mémoire Non Volatile

          
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About the Book

Cette thèse s'inscrit dans la thématique des MRAM, nouvelles mémoires non volatiles utilisant des propriétés originales de l'électronique de spin. Le but de ce travail a été principalement de démontrer qu'un nouveau concept de MRAM était possible afin de passer outre les limitations imposées par chacune des générations déjà existantes (TA-MRAM et STT-RAM). Pour cela, leurs avantages respectifs ont été combinés, à savoir la stabilité thermique pour la TA-MRAM et l'écriture sans champ magnétique pour la STT-RAM. C'est ainsi qu'a été donnée au cours de cette étude la première démonstration de STT-TA- MRAM ainsi qu'une optimisation de ses propriétés grâce une structure améliorée. Le retournement de la couche de stockage par couple de transfert de spin a donc été au centre de ces recherches. Un montage expérimental innovant a également permis d'observer le retournement de l'aimantation en temps réel dans le but de mieux comprendre la physique de l'écriture. Enfin, la problématique de la durée de vie des barrières tunnel a été abordée montrant que celles-ci claquent plus lentement que prévu pour les impulsions courtes.


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Product Details
  • ISBN-13: 9786131572098
  • Publisher: Omniscriptum
  • Publisher Imprint: Omniscriptum
  • Height: 229 mm
  • No of Pages: 144
  • Series Title: Omn.Univ.Europ.
  • Weight: 222 gr
  • ISBN-10: 6131572097
  • Publisher Date: 28 Feb 2018
  • Binding: Paperback
  • Language: French
  • Returnable: N
  • Spine Width: 9 mm
  • Width: 152 mm


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