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Gan and Related Alloys 1999: Volume 595

Gan and Related Alloys 1999: Volume 595

          
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About the Book

This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.


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Product Details
  • ISBN-13: 9781107413290
  • Publisher: Cambridge University Press
  • Publisher Imprint: Cambridge University Press
  • Height: 229 mm
  • No of Pages: 1052
  • Series Title: Mrs Proceedings
  • Sub Title: Volume 595
  • Width: 152 mm
  • ISBN-10: 110741329X
  • Publisher Date: 05 Jun 2014
  • Binding: Paperback
  • Language: English
  • Returnable: N
  • Spine Width: 52 mm
  • Weight: 1377 gr


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