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Charakterisierung der Kapazität bis zur Resonanzfrequenzverschiebung und chaotisches Verhalten des Dünnschichtenkondensators PZT(30/70)

Charakterisierung der Kapazität bis zur Resonanzfrequenzverschiebung und chaotisches Verhalten des Dünnschichtenkondensators PZT(30/70)

          
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About the Book

Diplomarbeit aus dem Jahr 2009 im Fachbereich Physik - Experimentalphysik, Note: 1,2, Martin-Luther-Universität Halle-Wittenberg (Physik), Veranstaltung: 2004-2009, Sprache: Deutsch, Abstract: Kapitel 1 Einleitung Der moderne Lebensbedarf der Menschen erfordert viele interessante Beiträge zur Forschung und Entwicklung von elektrokeramischen Werkstoffen. Neben elektrischen Eigenschaften besitzen einige Materialien auch noch besondere Eigenschaften wie Piezoelektrizität oder Ferroelektrizität. Mit neuen und modernen Technologien können die neuartigen Bauelemente im mikroelektronischen bis nanoelektrischen Bereich gebaut werden. Die ferroischen Materialien besitzen hohe bis sehr hohe relative Dielektrizitätskonstanten (εr) im Bereich zwischen 100 und 100.000, weshalb sie als Material für Keramikkondensatoren mit hoher Volumenkapazität verwendet werden. Normalerweise ersetzen sie zunehmend die Keramikkondensatoren mit einem Widerstand (R) und einem Spule (L). Dabei haben sie allerdings Nachteile, z.B. die starke Temperaturabhängigkeit und die hohen dielektrischen Verlustfaktoren. Mit hohen Dielektrizitätskonstanten werden sie auch in der Halbleitertechnologie interessant, wo für kleinere Speicherschaltkreise (RAM) hohe Kapazitäten auf engstem Raum benötigt werden. Der Hauptvorteil bei der Verwendung von sogenannten FeRAM (ferroelektrischen RAM) ist, dass diese ihren Ladungszustand im Vergleich zu derzeit (2008) hauptsächlich eingesetzten DRAMs quasi nicht verlieren. Der Aufbau einer DRAM-Zelle besteht aus einem Kondensator und einem Transistor. Die In-formation wird als elektrische Ladung im Kondensator gespeichert. Jede Speicherzelle speichert ein Bit. Ein Bit von diesem herkömmlichen FeRAM besteht aus einem Kondensator und aus einem Transistor, welches einen ferroelektrischen Film anstelle eines isolierenden Films des Gatters des einzelnen Feldeffekttransistors benutzt. Der Bereich, der für eine Einzelzelle erforderlich ist, ist lediglich der Raum, der durch de


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Product Details
  • ISBN-13: 9783656226925
  • Publisher: Grin Publishing
  • Binding: Paperback
  • Language: German
  • Returnable: N
  • Spine Width: 4 mm
  • Width: 148 mm
  • ISBN-10: 365622692X
  • Publisher Date: 29 Jun 2012
  • Height: 210 mm
  • No of Pages: 68
  • Series Title: German
  • Weight: 100 gr


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Charakterisierung der Kapazität bis zur Resonanzfrequenzverschiebung und chaotisches Verhalten des Dünnschichtenkondensators PZT(30/70)
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