Uwe SchroederDr. Uwe Schroeder has been in a Deputy Scientific Director position at Namlab since 2009. His main research focuses include material properties of ferroelectric hafnium oxide and the integration of the material into future devices.

Prior to joinig NaMLab, Schroeder was in a Senior Staff Scientist position at Qimonda, which was previously known as Infineon Technologies Memory Division and prior as Siemens Semiconductor. He joined Siemens in 1997 for DRAM capacitor development in the DRAM Development Alliance with IBM and Toshiba in Hopewell Jct., NY before transferring to Infineon's Memory Development Center in Dresden, Germany in 2000. Here, he continued the research on high k dielectrics and its integration into DRAM capacitors as a project manager. During this work the so far unknown ferroelectric properties of doped HfO2 based dielectrics were discovered. He focused on a detailed understanding of these new material properties and their integration into memory devices. He is (co-) author of more than 250 papers, conference contributions, and book chapters and 50 patents. These results include various publications on ferroelectric HfO2 material properties and based devices: 50 peer-reviewed scientific journals, 35 invited presentations and one book chapter. Read More Read Less