Michael Schröter

Michael SchröterMichael Schroeter received his Dr.-Ing. degree (scl) in electrical engineering and the "venia legendi" on semiconductor devices in 1988 and 1994, respectively, from the Ruhr-University Bochum, Germany. He was with Nortel and Bell Northern Research, Otawa, Canada, as a Team Leader and Advisor until 1996 when he joined Rockwell (later Conexant), Newport Beach (CA), where he managed the RF Device Modeling Group. Dr. Schroeter has been a Full Professor at the University of Technology at Dresden, Germany, since 1999, and has an adjunct affiliation with UC San Diego, USA. He is the author of the bipolar transistor compact model HICUM, a worldwide standard since 2003, and has co-authored a textbook entitled "Compact hierarchical modeling of bipolar transistors with HICUM" as well as over 220 peer reviewed publications and four invited book chapters. Dr. Schroeter was a co-founder of XMOD Technologies in Bordeaux, France. During a two-year Leave of Absence from TUD (2009-2011) he was the Vice President of RF Engineering at RFNano, where he was responsible for the device design of the first 4" wafer-scale carbon nanotube FET process technology. He was the Technical Project Manager for DOTFIVE (2008-2011) and DOTSEVEN (2012-2016), which were EU funded research projects for advancing high-speed SiGe HBT technology towards THz applications, and has been leading the Carbon Path project within the German Excellence Cluster CfAED. Since 2013, he has been a member of the ITRS/IRDS RF-AMS subcommittee. Read More Read Less

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Silicon-Germanium Heterojunction Bipolar Transistors for MM-Wave Systems Technology, Modeling and Circuit Applications5 % NR
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