Harold J HovelHarold J. Hovel received his Ph.D. degree from Carnegie Mellon University in 1968. He joined the IBM T.J.Watson Research Center in 1968 and is currently a Research Staff Member at the IBM laboratory. His research has been in the area of semiconductormaterials, characterisation, and devices, including III-V compounds and integrated circuit processing, heterojunction devices, solar cells of many types, Si materials characterisation, and optical metrology. He has worked on silicon-on-insulator materials since 1990 including both bonded SOI and SIMOX, strained Si, silicon-germanium, and combinations of these materials. He is the author of 80 papers, 30 patents, and a number of review articles in both solar energy and SOI materials. Read More Read Less