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Erlangen Fraunhofer IISB

Erlangen Fraunhofer IISB

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Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.13 % POD/NR
Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.
By: Ludwig Stockmeier, Erlangen Fraunhofer IISB
Publisher: Fraunhofer Verlag
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₹8,455
₹7,327
Binding:
Paperback
Release:
03 Aug 2018
Language:
English
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Print On Demand (POD) titles : are those which have been especially printed by the Publisher / Vendor partner only after an order for them has been received. They are also classified as Non-Returnable.
Non-Returnable titles : are those which have been classified as Non-Returnable under any circumstance by International Publishers / Vendor partners.
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