D N BoseD. N. Bose is a leading researcher on Semiconductor Materials and Devices. At the Indian Institute of Technology, Kharagpur (1977-1998) his group successfully completed major SPV projects on `Polycrystalline Silicon from rice-husk' and `Study of PEC olar cells using III-V compounds and ternary alloys'. His other major projects were on `Solid electrolytes and rechargeable Lithium batteries', the `Growth of single crystal Indium Phosphide' and 'Semiconductor Lasers', in which InP/ InGaAs Quantum Well lasers were fabricated by MOVPE. He was Visiting Professor at the Université de Neuchâtel, Switzerland. He obtained his M.Sc. in Radiophysics and Electronics from the University of Calcutta in 1959 after which he was awarded an ICI (India) Technical Scholarship for doctoral studies in Semiconductor Physics at the University of Reading (1961-65). After his Ph.D., he joined Pennsylvania State University as Research Associate and worked on semiconductor radiation dosimetry and ferroelectric materials. He was Visiting Professor at Virginia Polytechnic Institute (1985-86) and Visiting Scientist at MIT in 2003. He has over 200 publications in international journals and conferences. He was elected Fellow of the Indian Academy of Science and the National Academy of Science and awarded the Ramlal Wadhwa Gold Medal by IETE. Read More Read Less