Cédric RobertCédric Robert obtained a PhD in physics and optoelectronics at INSA Rennes (France) where he studied nanostructures on GaP for the monolithic integration of a laser structure on silicon. He then moved to the III-V materials and devices group of the Tndall National Institute (Ireland) where he designed, fabricated and characterized optoelectronics devices based on III-V compounds. In particular, he developed III-V light emitters that are transfer printed onto silicon substrates. He joined the Laboratory of Physics and Chemistry of Nano-objects (LPCNO) in INSA Toulouse to study the optical properties of semiconducting transition metal dichalcogenide monolayers (MoS2, WS2, MoSe2, WSe2, MoTe2). He authored or co-authored 20 papers in top ranked journals. Read More Read Less