Cheol Seong Hwang

Cheol Seong HwangCheol Seong Hwang received the M.Sc. degree in 1989 and the Ph.D. degree in 1993 in department of inorganic materials science and engineering, both from Seoul National University-Seoul, South Korea. He joined Samsung Electronics as a senior researche in 1994 and made contributions to the fields of semiconductor memory devices including his research on high-k dielectrics such as (Ba, Sr)TiO3. Since 1998, he has been a professor with the Department of Materials science and Engineering in Seoul National University. He has authored or coauthored more than 495 papers in international peer-reviewed scientific journals, which are cited 17,700 times, has given 95 invited presentations in international conferences. He also holds 75 international/domestic patents. He is a recipient of Alexander von Humboldt fellowship award, the 7th Presidential Young Scientist Award of the Korean government, and AP Faculty Excellence Award, Air Products, USA. His current interests include high-k gate oxide, DRAM capacitors, new memory devices including RRAM/PRAM, ferroelectric materials and devices, and thin film transistors. Read More Read Less

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Atomic Layer Deposition for Semiconductors59 %
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Atomic Layer Deposition for Semiconductors37 %
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Atomic Layer Deposition for Semiconductors3 % NR
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