Ahtisham Ul Haq Pampori

Ahtisham Ul Haq PamporiAhtisham Pampori is a doctoral student at the Indian Institute of Technology Kanpur (IIT Kanpur), currently working on the characterization and modeling of GaN HEMT RF devices. He is one of the developers of ASM-HEMT, an industry standard model for AGaN/GaN HEMTs. His research is focused on the modeling and characterization of GaN HEMTs and their applications in RF systems. He is a recipient of the prestigious Prime Minister's Research Fellowship (PMRF). He holds his bachelor's degree in Electronics and Communications Engineering from NIT Srinagar. Read More Read Less

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Gan Transistor Modeling for RF and Power Electronics14 % NR
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